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| rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) stacked 1gb c-die ddr sdram specification 66 tsop-ii with pb-free (rohs compliant) (x4/x8) information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any license, express or implied, by estoppel or otherwise, to any intellectual property rights in samsung products or technology. all information in this document is provided on as "as is" basis without guarantee or warranty of any kind. 1. for updates or additional information about sa msung products, contact your nearest samsung office. 2. samsung products are not intended for use in life support, critical care, me dical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmen tal procurement to which special terms or provisions may apply. * samsung electronics reserves the right to change products or specification without notice.
rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) table of contents 1.0 key features ............ ................. ................ ................ ................. ................ ............... ................. 4 2.0 ordering information .... ................ ................. ................ ................ ................. ................ .......... 4 3.0 operating frequencies.............. ................ ................ .............. ............... .............. ............ .......... 4 4.0 pin description ........ ................. ................ ................ ................. ................ ................ ................ 5 5.0 package physical dimension ...... ................. ................ .............. .............. .............. .............. .... 6 6.0 block diagram (64mbit x4 / 32mb it x8 i/o x4 banks) ........ ................ .............. .............. ........... 7 7.0 input/output function description .. ................. .............. .............. ............... .............. ............. .. 8 8.0 command truth table .... ................. ................ ................ ................. ................ ................. ........ 9 9.0 general description..... ................ ................ ................. ................ ................. ................ ............10 10.0 absolute maximum rating ......... ................. ................ .............. .............. .............. ............. ....10 11.0 dc operating conditions ................... ................. ................ ................. ................ ............. ......10 12.0 ddr sdram spec it ems & test conditions ......... ................. ................ ................. ..............11 13.0 input/output capacitance ............... ................ ................. ................ ................. ............... ......11 14.0 detailed test condition for d dr sdram idd1 & idd7a .. .............. .............. .............. ..........12 15.0 ddr sdram idd spec table ......... ................ ................ .............. ............... .............. ............ ..13 16.0 ac operating conditions ................ ................ ................. ................ ................. ............... ......14 17.0 ac overshoot/undershoot speci fication for address and control pi ns ............. ..............14 18.0 overshoot/undershoot specification for data, strobe and m ask pins.............. .................15 19.0 ac timming parameters & specifications ........... ................. ................ ................. ..............16 20.0 system character istics for ddr sdram .............. .............. ............... .............. .............. ...... 17 21.0 component notes ........ ................ ................. ................ ................ ................. ................ ......... 18 22.0 system notes ......... ................. ................ ................ ................. ................ ................. ..............20 23.0 ibis : i/v characteris tics for input and output bu ffers ................ .............. .............. ............21 rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) revision history revision month year history 0.0 january 2005 - first version for internal review 1.0 april 2005 - revision 1.0 spec. release. 1.1 june 2005 - changed master format. rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) ? double-data-rate architecture; two data transfers per clock cycle ? bidirectional data strobe dqs ? four banks operation ? differential clock inputs(ck and ck ) ? dll aligns dq and dqs transition with ck transition ? mrs cycle with address key programs -. read latency 2, 2.5 (clock) -. burst length (2, 4, 8) -. burst type (sequential & interleave) ? all inputs except data & dm are sampled at th e positive going edge of the system clock(ck) ? data i/o transactions on both edges of data strobe ? edge aligned data output, center aligned data input ? dm for write masking only (x4, x8) ? auto & self refresh ? 7.8us refresh interval(8k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii pb-free package ? rohs compliant a2(ddr266@cl=2.0) b0(ddr266@cl=2.5) speed @cl2 133mhz 100mhz speed @cl2.5 133mhz 133mhz speed @cl3 - - cl-trcd-trp 2-3-3 2.5-3-3 part no. org. max freq. interface package k4h1g0638c-uc/la2 st.256m x 4 a2(ddr266@cl=2) sstl2 66pin tsop ii k4h1g0638c-uc/lb0 b0(ddr266@cl=2.5) k4h1g0738c-uc/la2 st.128m x 8 a2(ddr266@cl=2) sstl2 66pin tsop ii k4h1g0738c-uc/lb0 b0(ddr266@cl=2.5) 1.0 key features 2.0 ordering information 3.0 operating frequencies rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) dm is internally loaded to match dq and dqs identically. row & column address configuration organization row address column address st.256mx4 a0~a12 a0-a9, a11, a12 st.128mx8 a0~a12 a0-a9, a11 4.0 pin description stacked 1gb tsop-ii package pinout v dd 1 66pin tsop ii (400mil x 875mil) dq 0 2 v ddq 3 nc 4 dq 1 5 v ssq 6 nc 7 dq 2 8 v ddq 9 nc 10 dq 3 11 v ssq 12 ba 0 20 cs0 19 ras 18 cas 17 we 16 nc 15 v ddq 14 nc 13 v dd 27 a 3 26 a 2 25 a 1 24 a 0 23 ap/a 10 22 ba 1 21 v ss 54 dq 7 53 v ssq 52 nc 51 dq 6 50 v ddq 49 nc 48 dq 5 47 v ssq 46 nc 45 dq 4 44 v ddq 43 a 11 35 36 cke0 37 ck 38 dm 39 v ref 40 v ssq 41 nc 42 v ss 55 a 4 56 a 5 57 a 6 58 a 7 59 a 8 60 a 9 34 (0.65mm pin pitch) 33 32 31 30 29 28 61 62 63 64 65 66 nc nc nc nc cs1 v dd nc dqs nc v ss ck cke1 a 12 v ss nc v ssq nc dq 3 v ddq nc nc v ssq nc dq 2 v ddq a 11 cke0 ck dm v ref v ssq nc v ss a 4 a 5 a 6 a 7 a 8 a 9 nc dqs nc v ss ck cke1 a 12 v dd nc v ddq nc dq 0 v ssq nc nc v ddq nc dq 1 v ssq ba 0 cs0 ras cas we nc v ddq nc v dd a 3 a 2 a 1 a 0 ap/a 10 ba 1 nc nc nc nc cs1 v dd bank address ba0~ba1 auto precharge a10 st.256mb x 4 st.128mb x 8 rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) 5.0 package physical dimension units : millimeters note 1. ( ) is reference 2. [ ] is ass ? y out quality 66pin tsopii / package dimension 10.16 (0.50) 0.45~0.75 0.125 + 0.075 - 0.035 0 ~8 ( 4 ) ( r 0 . 2 5 ) ( r0. 2 5) 0.45~0.75 0.25typ 22.62max 22.22 0.10 (0.71) 0.25 0.08 0.65 2.54(max) 0.05(min) 11.76 0.20 #1 #33 #66 #34 6.0 block diagram 128mx4 128mx4 ck,ck ,cas ras ,we ,dm cke1,cs1 cke0,cs0 i/o0-i/o3,dqs a0-a12,ba0,ba1 64mx8 64mx8 ck,ck ,cas ras ,we ,dm cke1,cs1 cke0,cs0 i/o 0 ~ i/o 3, dqs a0-a12, ba0,ba1 st.256mb x 4 st.128mb x 8 rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) symbol type description ck, ck input clock : ck and ck are differential clock inputs. all address and control input signals are sam- pled on the positive edge of ck and negative edge of ck . output (read) data is referenced to both edges of ck. internal clock signals are derived from ck/ck . cke input clock enable : cke high activates, and cke low deactivates internal clock signals, and device input buffers and output drivers. taking cke low provides precharge power- down and self refresh operation (all banks idle), or active power-down (row active in any bank). cke is synchronous for power-down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit, and for output disable. cke must be maintained high throughput read and write accesses. input buffers, excluding ck, ck and cke are disabled during power-down. input buffers, excluding cke are disabled during self refresh. cke is an sstl_2 input, but will detect an lvcmos low level after vdd is applied upon 1st power up, after v ref has become stable during the power on and ini- tialization sequence, it must be maintained for proper operation of the cke receiver. for proper self-refresh entry and exit, v ref must be maintained to this input. cs input chip select : cs enables(registered low) and disables(registered high) the command decoder. all commands are masked when cs is registered high. cs provides for external bank selection on system s with multiple banks. cs is considered part of the command code. ras , cas , we input command inputs : ras , cas and we (along with cs ) define the command being entered. ldm,(udm) input input data mask : dm is an input mask signal fo r write data. input data is masked when dm is sampled high along with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input only, the dm loading matches the dq and dqs loading. for the x16, ldm corresponds to the data on dq0~d7 ; udm corresponds to the data on dq8~dq15. dm may be driven high, low, or floating during reads. ba0, ba1 input bank addres inputs : ba0 and ba1 define to which bank an active, read, write or pre- charge command is being applied. a [0 : 12] input address inputs : provide the row address for active commands, and the column address and auto precharge bit for read/write commands, to select one location out of the mem- ory array in the respective bank. a10 is sampled during a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also provide the op-code during a mode regist er set command. ba0 and ba1 define which mode register is loaded during the mode register set command (mrs or emrs). dq i/o data input/output : data bus ldqs,(u)dqs i/o data strobe : output with read data, input with write data. edge-align ed with read data, cen- tered in write data. used to capture write data . for the x16, ldqs corresponds to the data on dq0~d7 ; udqs corresponds to the data on dq8~dq15 nc - no connect : no internal electrical connection is present. vddq supply dq power supply : +2.5v 0.2v. (+2.6v 0. 1v for ddr400) vssq supply dq ground. vdd supply power supply : +2.5v 0.2v. (+2.6v 0. 1v for ddr400) vss supply ground. vref input sstl_2 reference voltage. 7.0 input/output function description rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) (v=valid, x=don t care, h=logic high, l=logic low) note : 1. op code : operand code. a 0 ~ a 12 & ba 0 ~ ba 1 : program keys. (@emrs/mrs) 2. emrs/mrs can be issued onl y at all banks precharge state. a new command can be issued 2 clock cycles after emrs or mrs. 3. auto refresh functions are same as the cbr refresh of dram. the automatical precharge without row precharge command is meant by "auto". auto/self refresh can be issued only at all banks precharge state. 4. ba 0 ~ ba 1 : bank select addresses. if both ba 0 and ba 1 are "low" at read, write, row active and precharge, bank a is selected. if ba 0 is "high" and ba 1 is "low" at read, write, row active and precharge, bank b is selected. if ba 0 is "low" and ba 1 is "high" at read, write, row active and precharge, bank c is selected. if both ba 0 and ba 1 are "high" at read, write, row acti ve and precharge, bank d is selected. 5. if a 10 /ap is "high" at row precharge, ba 0 and ba 1 are ignored and all banks are selected. 6. during burst write with auto precharge, new read/write command can not be issued. another bank read/write command can be issued after the end of burst. new row active of the associated bank can be issued at t rp after the end of burst. 7. burst stop command is valid at every burst length. 8. dm(x4/8) sampled at the rising and falling edges of the dqs and data-in are masked at the both edges (write dm latency is 0) . udm/ldm(x16 only) sampled at the rising and falling edges of the udqs/ldqs and data-in are masked at the both edges (write udm/ldm latency is 0). 9. this combination is not defined for any function, which means "no operation(nop)" in ddr sdram. command cken-1 cken cs ras cas we ba0,1 a10/ap a0 ~ a9, a11 ~ a12 note register extended mrs h x l l l l op code 1, 2 register mode register set h x l l l l op code 1, 2 refresh auto refresh h h ll l h x 3 self refresh entry l 3 exit l h lh h h x 3 hx x x 3 bank active & row addr. h x l l h h v row address read & column address auto precharge disable hxlhlhv l column address 4 auto precharge enable h 4 write & column address auto precharge disable hxlhllv l column address 4 auto precharge enable h 4, 6 burst stop h x l h h l x 7 precharge bank selection hxllhl vl x all banks x h 5 active power down entry h l hx x x x lv v v exit l h x x x x precharge power down mode entry h l hx x x x lh h h exit l h hx x x lv v v dm(udm/ldm for x16 only) h x x 8 no operation (nop) : not defined h x hx x x x 9 lh h h 9 8.0 command truth table rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) st. 64m x 4bit x 4 banks / st. 32m x 8b it x 4 banks double data rate sdram the k4h1g0638c / k4h1g0738c is 1,073,741,824 bits of doubl e data rate synchronous dram organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with samsung s high performance cmos technology. synchronous features with data strobe allow extremely high performance up to 266mb/s per pin. i/o transactions are possible on both edges of dqs. ra nge of operating frequencies, programm able burst length and programmable latencies allo w the device to be useful for a variety of h igh per- formance memory system applications. note : permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restri cted to recommend operation condition. exposure to higher than recommended voltage for extended per iods of time could af fect device reliability. parameter symbol value unit voltage on any pin relative to v ss v in , v out -0.5 ~ 3.6 v voltage on v dd & v ddq supply relative to v ss v dd , v ddq -1.0 ~ 3.6 v storage temperature t stg -55 ~ +150 c power dissipation p d 1.5 w short circuit current i os 50 ma recommended operating conditions(voltage referenced to v ss =0v, t a =0 to 70 c) note : 1. vref is expected to be equal to 0.5*vddq of the transmitting device, and to track variations in the dc level of same. peak-t o peak noise on vref may not exceed +/-2% of the dc value. 2. v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to vref, and must track vari- ations in the dc level of vref 3. vid is the magnitude of the difference between the input level on ck and the input level on ck . 4. the ratio of the pullup current to the pulldown current is s pecified for the same temperature and voltage, over the entire t emperature and voltage range, for device drain to source voltages from 0.25v to 1.0v. for a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. the full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0. parameter symbol min max unit note supply voltage(for device with a nominal v dd of 2.5v for ddr266/333) v dd 2.3 2.7 supply voltage(for device with a nominal v dd of 2.6v for ddr400) v dd 2.5 2.7 i/o supply voltage(for device with a nominal v dd of 2.5v for ddr266/333) v ddq 2.3 2.7 v i/o supply voltage(for device with a nominal v dd of 2.5v for ddr400) v ddq 2.5 2.7 i/o reference voltage v ref 0.49*vddq 0.51*vddq v 1 i/o termination voltage(system) v tt v ref -0.04 v ref +0.04 v2 input logic high voltage v ih (dc) v ref +0.15 v ddq +0.3 v input logic low voltage v il (dc) -0.3 v ref -0.15 v input voltage level, ck and ck inputs v in (dc) -0.3 v ddq +0.3 v input differential voltage, ck and ck inputs v id (dc) 0.36 v ddq +0.6 v 3 v-i matching: pullup to pulldown current ratio vi(ratio) 0.71 1.4 - 4 input leakage current i i -2 2 ua output leakage current i oz -5 5 ua output high current(normal strengh driver) ;v out = v tt + 0.84v i oh -16.8 ma output high current(normal strengh driver) ;v out = v tt - 0.84v i ol 16.8 ma output high current(half strengh driver) ;v out = v tt + 0.45v i oh -9 ma output high current(half strengh driver) ;v out = v tt - 0.45v i ol 9ma 9.0 general description 10.0 absolute maximum rating 11.0 dc operating conditions rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) conditions symbol operating current - one bank active-precharge; trc=trcmin; tck=10ns for ddr200, tck=7.5n s for ddr266, 6ns for ddr333, 5ns for ddr400; dq,dm and dqs inputs cha nging once per clock cycle; address and control i nputs changing once every two clock cycles. idd0 operating current - one bank operation ; one bank open, bl=4, reads - refer to the following page for detailed test condition idd1 precharge power-down standby current; all banks idle; power - down mode; cke = rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) idd7a : operating current: four bank operation 1. typical case: for ddr200,266,333: vdd = 2.5v, t=25 c; for ddr400: vdd=2.6v,t=25 c worst case : vdd = 2.7v, t= 10 c 2. four banks are being interleaved with trc(min), bu rst mode, address and control inputs on nop edge are not changing. lout = 0ma 4. timing patterns - b0(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5, bl=4, trrd = 2*tck, trcd = 3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - a2(133mhz, cl=2) : tck = 7.5ns, cl2=2, bl=4, tr rd = 2*tck, trcd = 3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - b3(166mhz,cl=2.5) : tck=6ns, cl=2.5, bl=4, t rrd=2*tck, trcd=3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - cc(200mhz,cl = 3) : tck = 5ns, cl = 3, bl = 4, trcd = 3*tck , trc = 11*tck, tras = 8*tck read : a0 n n r0 n n n n p0 n n - repeat the same timing with random address changing *50% of data changing at every transfer legend : a=activate, r=read, w=write, p=precha rge, n=deselect idd1 : operating current: one bank operation 1. typical case: for ddr200,266,333: vdd = 2.5v, t=25 c; for ddr400: vdd=2.6v,t=25 c worst case : vdd = 2.7v, t= 10 c 2. only one bank is accessed with t rc(min), burst mode, address and contro l inputs on nop edge are changing once per clock cycle. lout = 0ma 3. timing patterns - b0(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5 , bl=4, trcd = 3*tck, trc = 9*tck, tras = 6*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - a2 (133mhz, cl=2) : tck = 7.5ns, cl=2, bl =4, trcd = 3*tck, trc = 9*tck, tras = 6*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - b3(166mhz, cl=2.5) : tck=6ns, cl=2.5 , bl=4, trcd=3*tck, tr c = 10*tck, tras=7*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - cc(200mhz,cl = 3) : tck = 5ns, cl = 3, bl = 4, trcd = 3*tck , trc = 11*tck, tras = 8*tck read : a0 n n r0 n n n n p0 n n - repeat the same timing with random address changing *50% of data changing at every transfer legend : a=activate, r=read, w=write, p=precharge, n=deselect 14.0 detailed test conditio n for ddr sdram idd1 & idd7a rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) (v dd =2.7v, t = 10 c) symbol st.256mx4 (k4h1g0638c) unit notes a2(ddr266@cl=2.0) b0(ddr266@cl=2.5) idd0 125 125 ma idd1 155 155 ma idd2p 10 10 ma idd2f 60 60 ma idd2q 50 50 ma idd3p 35 35 ma idd3n 75 75 ma idd4r 170 170 ma idd4w 175 175 ma idd5 225 225 ma idd6 normal 10 10 ma low power 6 6 ma optional idd7a 370 370 ma symbol st.128mx8 (k4h1g0738c) unit notes a2(ddr266@cl=2.0) b0(ddr266@cl=2.5) idd0 125 125 ma idd1 155 155 ma idd2p 10 10 ma idd2f 60 60 ma idd2q 50 50 ma idd3p 35 35 ma idd3n 75 75 ma idd4r 170 170 ma idd4w 170 170 ma idd5 225 225 ma idd6 normal 10 10 ma low power 6 6 ma optional idd7a 370 370 ma 15.0 ddr sdram idd spec table rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) note : 1. vid is the magnitude of the difference between the input level on ck and the input level on /ck. 2. the value of vix is expected to equal 0.5*vddq of the transm itting device and must track variations in the dc level of the s ame. parameter/condition symbol min max unit note input high (logic 1) voltage, dq, dqs and dm signals vih(ac) vref + 0.31 v input low (logic 0) voltage, dq, dqs and dm signals. vil(ac) vref - 0.31 v input differential voltage, ck and /ck inputs vid(ac) 0.7 vddq+0.6 v 1 input crossing point voltage, ck and /c k inputs vix(ac) 0.5*vddq-0.2 0.5*vddq+0.2 v 2 parameter specification ddr400 ddr333 ddr200/266 maximum peak amplitude allowed for overshoot tbd tbd 1.5 v maximum peak amplitude allowed for undershoot tbd tbd 1.5 v the area between the overshoot signal and vdd mu st be less than or equal to tbd tbd 4.5 v-ns the area between the undershoot signal and gnd mu st be less than or equal to tbd tbd 4.5 v-ns 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.5 0.6875 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.3125 6.5 7.0 vdd overshoot maximum amplitude = 1.5v area = 4.5v-ns maximum amplitude = 1.5v undershoot gnd volts (v) tims(ns) ac overshoot/undershoot definition 16.0 ac operating conditions 17.0 ac overshoot/unde rshoot specification for address and control pins rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) parameter specification ddr400 ddr333 ddr200/266 maximum peak amplitude allow ed for overshoot tbd tbd 1.2 v maximum peak amplitude allow ed for undershoot tbd tbd 1.2 v the area between the overshoot signal and vdd must be less than or equal to tbd tbd 2.4 v-ns the area between the undershoot signal and gn d must be less than or equal to tbd tbd 2.4 v-ns 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0 vddq overshoot maximum amplitude = 1.2v area = 2.4v-ns maximum amplitude = 1.2v undershoot gnd volts (v) tims(ns) dq/dm/dqs ac overshoot/undershoot definition 18.0 overshoot/undershoot specific ation for data, strobe and mask pins rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) parameter symbol a2 (ddr266@cl=2.0) b0 (ddr266@cl=2.5) unit note min max min max row cycle time trc 65 65 ns refresh row cycle time trfc 75 75 ns row active time tras 45 70k 45 70k ns ras to cas delay trcd 20 20 ns row precharge time trp 20 20 ns row active to row active delay trrd 15 15 ns write recovery time twr 15 15 ns last data in to read command twtr 1 1 tck clock cycle time cl=2.0 tck 7.5 12 10 12 ns cl=2.5 7.5127.512ns cl=3.0 ---- clock high level width tch 0.45 0.55 0.45 0.55 tck clock low level width tcl 0.45 0.55 0.45 0.55 tck dqs-out access time from ck/ck tdqsck -0.75 +0.75 -0.75 +0.75 ns output data access time from ck/ck tac -0.75 +0.75 -0.75 +0.75 ns data strobe edge to ouput data edge tdqsq - 0.5 - 0.5 ns 22 read preamble trpre 0.9 1.1 0.9 1.1 tck read postamble trpst 0.4 0.6 0.4 0.6 tck ck to valid dqs-in tdqss 0.75 1.25 0.75 1.25 tck dqs-in setup time twpres 0 0 ns 13 dqs-in hold time twpre 0.25 0.25 tck dqs falling edge to ck rising-setup time tdss 0.2 0.2 tck dqs falling edge from ck rising-hold time tdsh 0.2 0.2 tck dqs-in high level width tdqsh 0.35 0.35 tck dqs-in low level width tdqsl 0.35 0.35 tck address and control input setup time(fast) tis 0.9 0.9 ns 15, 17~19 address and control input hold time(fast) tih 0.9 0.9 ns 15, 17~19 address and control input setup tis 1.0 1.0 ns 16~19 address and control input hold time(slow) tih 1.0 1.0 ns 16~19 data-out high impedence time from ck/ck thz -0.75 +0.75 -0.75 +0.75 ns 11 data-out low impedence time from ck/ck tlz -0.75 +0.75 -0.75 +0.75 ns 11 mode register set cycle time tmrd 15 15 ns dq & dm setup time to dqs tds 0.5 0.5 ns j, k dq & dm hold time to dqs tdh 0.5 0.5 ns j, k control & address input pulse width tipw 2.2 2.2 ns 18 dq & dm input pulse width tdipw 1.75 1.75 ns 18 exit self refresh to non-read command txsnr 75 75 ns exit self refresh to read command txsrd 200 200 tck refresh interval time trefi 7.8 7.8 us 14 output dqs valid window tqh thp -tqhs - thp -tqhs -ns21 clock half period thp tclmin or tchmin - tclmin or tchmin - ns 20, 21 data hold skew factor tqhs 0.75 0.75 ns 21 dqs write postamble time twpst 0.4 0.6 0.4 0.6 tck 12 active to read with auto precharge command trap 20 20 autoprecharge write recovery + precharge time tdal (twr/tck) + (trp/tck) (twr/tck) + (trp/tck) tck 23 19.0 ac timming para meters & specifications rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) the following specification parameters are required in systems using ddr333, ddr266 & ddr200 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. table 1 : input slew rate fo r dq, dqs, and dm table 2 : input setup & hold time derating for slew rate table 3 : input/output setup & ho ld time derating for slew rate table 4 : input/output setup & hold de rating for rise/fall delta slew rate table 5 : output slew rate char acteristice (x4, x8 devices only) table 6 : output slew rate characteristice (x16 devices only) table 7 : output slew rate ma tching ratio characteristics ac characteristics ddr333 ddr266 ddr200 parameter symbol min max min max min max units notes dq/dm/dqs input slew rate measured between vih(dc), vil(dc) and vil(dc), vih(dc) dcslew tbd tbd tbd tbd 0.5 4.0 v/ns a, l input slew rate ? tis ? tih units notes 0.5 v/ns 0 0 ps i 0.4 v/ns +50 0 ps i 0.3 v/ns +100 0 ps i input slew rate ? tds ? tdh units notes 0.5 v/ns 0 0 ps k 0.4 v/ns +75 +75 ps k 0.3 v/ns +150 +150 ps k delta slew rate ? tds ? tdh units notes +/- 0.0 v/ns 0 0 ps j +/- 0.25 v/ns +50 +50 ps j +/- 0.5 v/ns +100 +100 ps j slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) notes pullup slew rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) notes pullup slew rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h ac characteristics ddr266b ddr200 parameter min max min max notes output slew rate matching ratio (pullup to pulldown) tbd tbd 0.67 1.5 e, l 20.0 system character istics for ddr sdram rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) 1. all voltages referenced to vss. 2. tests for ac timing, idd, and electrical, ac and dc characte ristics, may be conducted at nom inal reference/supply voltage l evels, but the related specifications and device operat ion are guaranteed for the full voltage range specified. 3. figure 1 represents the timing reference load used in defini ng the relevant timi ng parameters of the part. it is not int ended to be either a precise representation of the typical system env ironment nor a depiction of the actu al load present ed by a produc tion tester. system designers will use ibis or other simula tion tools to correlate the timing reference load to a system envir onment. manufacturers will correlate to their production test condit ions (generally a coaxial transmission line terminated at the tester elec- tronics). 4. ac timing and idd tests may use a vil to vih swing of up to 1.5 v in the test en vironment, but input timing is still refere nced to vref (or to the crossing point for ck/ck), and parameter specifications are guaranteed for the specified ac input levels u nder nor- mal use conditions. the minimum slew rate for the inpu t signals is 1 v/ns in the r ange between vil(ac) and vih(ac). 5. the ac and dc input level specifications are as defined in the sstl_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (be low) the dc input low (high) level. 6. inputs are not recognized as valid until vref stabilizes . exception: during the period before vref stabilizes, cke 0.2vddq is recognized as low. 7. enables on.chip refresh and address counters. 8. idd specifications are tested after the device is properly initialized. 9. the ck/ck input reference level (for timing referenced to ck/ck ) is the point at which ck and ck cross; the input reference level for signals other than ck/ck , is vref. 10. the output timing reference voltage level is vtt. 11. thz and tlz transitions occur in the same access time window s as valid data transitions. these parameters are not reference d to a specific voltage level but specify when the device output is no longer driving (hz), or begins driving (lz). 12. the maximum limit for this parameter is not a device limit. the device will operat e with a greater value for this parameter , but sys tem performance (bus turnaround) will degrade accordingly. 13. the specific requirement is that dqs be valid (high, low, or at some point on a valid transition) on or before this ck edge . a valid transition is defined as mo notonic and meeting the input slew rate specif ications of the device. when no writes we re previ ously in progress on the bus, dqs will be transitioning from high- z to logic low. if a previous write was in progress, dqs could be high, low, or transitioning from high to low at this time, depending on tdqss. 14. a maximum of eight auto refresh commands can be posted to any given ddr sdram device. 15. for command/address input slew rate 1.0 v/ns 16. for command/address input slew rate 0.5 v/ns and < 1.0 v/ns output vddq 50 ? 30pf (vout) figure 1 : timing reference load 21.0 component notes rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) component notes 17. for ck & ck slew rate 1.0 v/ns 18. these parameters guarantee device timing, but they are no t necessarily tested on each device. they may be guaranteed by device design or tester correlation. 19. slew rate is measured between voh(ac) and vol(ac). 20. min (tcl, tch) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limi ts for tcl and tch).....for example, tcl and tch are = 50% of th e period, less the half period jitter (tjit(hp)) of the cl ock source, and less the half period jitter due to crosstalk (tji t(crosstalk)) into the clock traces. 21. tqh = thp - tqhs, where: thp = minimum half clock period for any given cycle and is defined by clock hi gh or clock low (tch, tcl). tqhs accounts for 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push-out of dqs on one tansition followed by the worst case pull-in of dq on the next transition, both of wh ich are, separately, due to data pin skew and output pattern effect s, and p- channel to n-channel variation of the output drivers. 22. tdqsq consists of data pin skew and output pattern effects, and p-channel to n-channel variat ion of the output drivers for any given cycle. 23. tdal = (twr/tck) + (trp/tck) for each of the terms above, if not already an integer, round to the next highest integer. example: for ddr266b at cl=2.5 and tck=7.5ns tdal = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tdal = 5 clocks rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) b. pulldown slew rate is measured under the test conditions shown in figure 3. output test point vddq 50 ? figure 3 : pulldown slew rate test load c. pullup slew rate is measured between (vddq/2 - 320 mv +/- 250 mv) pulldown slew rate is measured between (vddq/2 + 320 mv +/- 250 mv) pullup and pulldown slew rate conditions are to be met fo r any pattern of data, including al l outputs switching and only on e output switching. example : for typical slew rate, dq0 is switching for minmum slew rate, all dq bits are switching from either high to low, or low to high. the remaining dq bits remain the same as for previous state. d. evaluation conditions typical : 25 c (t ambient), vddq = 2.5v(for ddr266/333) and 2.6v(for ddr400), typical process minimum : 70 c (t ambient), vddq = 2.3v(for ddr266/333) and 2.5v(for ddr400), slow - slow process maximum : 0 c (t ambient), vddq = 2.7v(for ddr266/333) and 2.7v(for ddr400), fast - fast process e. the ratio of pullup slew rate to pulldown slew rate is spec ified for the same temperature a nd voltage, over the entire tempe rature and voltage range. for a given output, it represents the maximu m difference between pullup and pulldown drivers due to process variation. f. verified under typical conditions for qualification purposes. g. tsopii package divices only. h. only intended for operation up to 266 mbps per pin. i. a derating factor will be used to increase tis and tih in the case where the input slew rate is below 0.5v/ns as shown in table 2. the input slew rate is based on the less er of the slew rates detemined by either vih(ac) to vil(ac) or vih(dc) to vil(dc), sim ilarly for rising transitions. j. a derating factor will be used to increase tds and tdh in the case where dq, dm, and dqs slew rates differ, as shown in tabl es 3 & 4. input slew rate is based on the larger of ac-ac delta rise, fall rate and dc-dc delta rise, input slew rate is based on the lesser of the slew rates determined by either vih(ac) to vil(ac) or vih(dc) to vil(dc), similarly for rising transitions. the delta rise/fall rate is calculated as: {1/(slew rate1)} - {1/(slew rate2)} for example : if slew rate 1 is 0.5 v/ns and slew rate 2 is 0.4 v/ns, then the delta rise, fall rate is - 0.5ns/v . using the table given, this would result in the need for an increase in tds and tdh of 100 ps. k. table 3 is used to increase tds and tdh in the case where the i/o slew rate is below 0.5 v/ns. the i/o slew rate is based on the lesser on the lesser of the ac - ac slew rate and the dc- dc slew rate. the inut slew rate is based on the lesser of the slew rate s deter mined by either vih(ac) to vil(ac) or vih( dc) to vil(dc), and similarly for rising transitions. l. dqs, dm, and dq input slew rate is spec ified to prevent double clocking of data and preserve setup and hold times. signal tr ansi tions through the dc region must be monotonic. a. pullup slew rate is characteristized under the test conditions as shown in figure 2. output test point vssq 50 ? figure 2 : pullup slew rate test load 22.0 system notes rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) figure 3. i/v characteristics for input/output buffers:pull up(above) and pull down(below) maximum typical high minumum vout(v) iout(ma) -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 0.0 1.0 2.0 minimum typical low typical high maximum 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 iout(ma) typical low vout(v) pullup characteristics for full strength output driver pulldown characteristics for full strength output driver ddr sdram output driver v-i characteristics ddr sdram output driver characteristics are defined for full and half strength operation as se lected by the emrs bit a1. figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable f or input into simulation tools. the driver ch aracteristcs evaluation conditions are: output driver characteristic curves notes: 1. the full variation in driver current from minimum to maxi mum process, temperature and vo ltage will lie within the outer bou nding lines the of the v-i curve of figure 3 and 4. 2. it is recommended that the "typical" ib is v-i curve lie within the inner bounding li nes of the v-i curves of figure 3 and 4. 3. the full variation in the ratio of the "typical" ibis pullup to "typical" ibis pulldown current should be unity +/- 10%, for device drain to source voltages from 0.1 to1.0. this specification is a design ob jective only. it is not guaranteed. typical 25c vdd/vddq = 2.5v, typical process minimum 70c vdd/vddq = 2.3v, slow-slow process maximum 0c vdd/vddq = 2.7v, fast-fast process 23.0 ibis : i/v characteristic s for input and output buffers rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) table 8. full strength driver characteristics pulldown current (ma) pullup current (ma) voltage (v) typical low typical high minimum maximum typical low typical high minimum maximum 0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0 0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0 0.3 18.1 20.1 13.8 26.0 - 18.1 -21.2 -13.8 -29.8 0.4 24.1 26.6 18.4 33.9 - 24.0 -27.7 -18.4 -38.8 0.5 29.8 33.0 23.0 41.8 - 29.8 -34.1 -23.0 -46.8 0.6 34.6 39.1 27.7 49.4 - 34.3 -40.5 -27.7 -54.4 0.7 39.4 44.2 32.2 56.8 - 38.1 -46.9 -32.2 -61.8 0.8 43.7 49.8 36.8 63.2 - 41.1 -53.1 -36.0 -69.5 0.9 47.5 55.2 39.6 69.9 - 41.8 -59.4 -38.2 -77.3 1.0 51.3 60.3 42.6 76.3 - 46.0 -65.5 -38.7 -85.2 1.1 54.1 65.2 44.8 82.5 - 47.8 -71.6 -39.0 -93.0 1.2 56.2 69.9 46.2 88.3 - 49.2 -77.6 -39.2 -100.6 1.3 57.9 74.2 47.1 93.8 - 50.0 -83.6 -39.4 -108.1 1.4 59.3 78.4 47.4 99.1 - 50.5 -89.7 -39.6 -115.5 1.5 60.1 82.3 47.7 103.8 - 50.7 -95.5 -39.9 -123.0 1.6 60.5 85.9 48.0 108.4 -51 .0 -101.3 -40.1 -130.4 1.7 61.0 89.1 48.4 112.1 -5 1.1 -107.1 -40.2 -136.7 1.8 61.5 92.2 48.9 115.9 -5 1.3 -112.4 -40.3 -144.2 1.9 62.0 95.3 49.1 119.6 -5 1.5 -118.7 -40.4 -150.5 2.0 62.5 97.2 49.4 123.3 -51 .6 -124.0 -40.5 -156.9 2.1 62.9 99.1 49.6 126.5 -51 .8 -129.3 -40.6 -163.2 2.2 63.3 100.9 49.8 129.5 -52 .0 -134.6 -40.7 -169.6 2.3 63.8 101.9 49.9 132.4 -52 .2 -139.9 -40.8 -176.0 2.4 64.1 102.8 50.0 135.0 -52 .3 -145.2 -40.9 -181.3 2.5 64.6 103.8 50.2 137.3 -52 .5 -150.5 -41.0 -187.6 2.6 64.8 104.6 50.4 139.2 -52 .7 -155.3 -41.1 -192.9 2.7 65.0 105.4 50.5 140.8 -52 .8 -160.1 -41.2 -198.2 rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) figure 4. i/v characteristics for input/output buffers:pull up(above) and pull down(below) maximum typical high minumum vout(v) iout(ma) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 iout(ma) minimum typical low typical high maximum 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 iout(ma) typical low vout(v) pullup characteristics for weak output driver pulldown characteristics for weak output driver rev. 1.1 june. 2005 ddr sdram ddr sdram stacked 1gb c-die (x4/x8) pulldown current (ma) pullup current (ma) voltage (v) typical low typical high minimum maximum typical low typical high minimum maximum 0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0 0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9 0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6 0.4 13.6 15.1 10.4 19.2 - 13.6 -15.7 -10.4 -19.2 0.5 16.9 18.7 13.0 23.6 - 16.9 -19.3 -13.0 -23.6 0.6 19.6 22.1 15.7 28.0 - 19.4 -22.9 -15.7 -28.0 0.7 22.3 25.0 18.2 32.2 - 21.5 -26.5 -18.2 -32.2 0.8 24.7 28.2 20.8 35.8 - 23.3 -30.1 -20.4 -35.8 0.9 26.9 31.3 22.4 39.5 - 24.8 -33.6 -21.6 -39.5 1.0 29.0 34.1 24.1 43.2 - 26.0 -37.1 -21.9 -43.2 1.1 30.6 36.9 25.4 46.7 - 27.1 -40.3 -22.1 -46.7 1.2 31.8 39.5 26.2 50.0 - 27.8 -43.1 -22.2 -50.0 1.3 32.8 42.0 26.6 53.1 - 28.3 -45.8 -22.3 -53.1 1.4 33.5 44.4 26.8 56.1 - 28.6 -48.4 -22.4 -56.1 1.5 34.0 46.6 27.0 58.7 - 28.7 -50.7 -22.6 -58.7 1.6 34.3 48.6 27.2 61.4 - 28.9 -52.9 -22.7 -61.4 1.7 34.5 50.5 27.4 63.5 - 28.9 -55.0 -22.7 -63.5 1.8 34.8 52.2 27.7 65.6 - 29.0 -56.8 -22.8 -65.6 1.9 35.1 53.9 27.8 67.7 - 29.2 -58.7 -22.9 -67.7 2.0 35.4 55.0 28.0 69.8 - 29.2 -60.0 -22.9 -69.8 2.1 35.6 56.1 28.1 71.6 - 29.3 -61.2 -23.0 -71.6 2.2 35.8 57.1 28.2 73.3 - 29.5 -62.4 -23.0 -73.3 2.3 36.1 57.7 28.3 74.9 - 29.5 -63.1 -23.1 -74.9 2.4 36.3 58.2 28.3 76.4 - 29.6 -63.8 -23.2 -76.4 2.5 36.5 58.7 28.4 77.7 - 29.7 -64.4 -23.2 -77.7 2.6 36.7 59.2 28.5 78.8 - 29.8 -65.1 -23.3 -78.8 2.7 36.8 59.6 28.6 79.7 - 29.9 -65.8 -23.3 -79.7 table 9. weak driver characteristics |
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